2sK2872-01MR n-channel mos-fet fap-iis series 450v 1,2w 8a 30w > features > outline drawing - high speed switching - low on-resistance - no secondary breakdown - low driving power - high voltage - v gs = 30v guarantee - repetitive avalanche rated > applications - switching regulators - ups - dc-dc converters - general purpose power amplifier > maximum ratings and characteristics > equivalent circuit - absolute maximum ratings (t c =25c), unless otherwise specified item symbol rating unit drain-source-voltage v ds 450 v continous drain current i d 8 a pulsed drain current i d(puls) 32 a gate-source-voltage v gs 35 v repetitive or non-repetitive (t ch 150c) i ar 8 a avalanche energy e as 164.1 mj max. power dissipation p d 30 w operating and storage temperature range t ch 150 c t stg -55 ~ +150 c l=4.70mh,vcc=45v - electrical characteristics (t c =25c), unless otherwise specified item symbol test conditions min. typ. max. unit drain-source breakdown-voltage bv dss i d =1ma v gs =0v 450 v gate threshhold voltage v gs(th) i d =1ma v ds= v gs 3,5 4,0 4,5 v zero gate voltage drain current i dss v ds =450v t ch =25c 10 500 a v gs =0v t ch =125c 0,2 1,0 ma gate source leakage current i gss v gs =35v v ds =0v 10 100 na drain source on-state resistance r ds(on) i d =4a v gs =10v 1,0 1,2 w forward transconductance g fs i d =4a v ds =25v 2 4 s input capacitance c iss v ds =25v 540 810 pf output capacitance c oss v gs =0v 100 150 pf reverse transfer capacitance c rss f=1mhz 45 70 pf turn-on-time t on ( t on =t d(on) +t r ) t d(on) v cc =300v 13 20 ns t r i d =8a 40 60 ns turn-off-time t off (t on =t d(off) +t f ) t d(off) v gs =10v 45 70 ns t f r gs =10 w 25 40 ns avalanche capability i av l = 4,70mh t ch =25c 8 a diode forward on-voltage v sd i f =2xi dr v gs =0v t ch =25c 1,1 1,65 v reverse recovery time t rr i f =i dr v gs =0v 450 ns reverse recovery charge q rr -di f /d t =100a/s t ch =25c 3,7 c - thermal characteristics item symbol test conditions min. typ. max. unit thermal resistance r th(ch-c) channel to case 4,17 c/w r th(ch-a) channel to air 62,5 c/w
n-channel mos-fet 2sK2872-01MR 450v 1,2w 8a 30w fap-iis series > characteristics typical output characteristics drain-source-on-state resistance vs. t ch typical transfer characteristics - i d =f(v ds ); 80s pulse test; t c =25c - r ds(on) = f(t ch ): id=4a; vgs=10v - i d =f(v gs ); 80s pulse test; v ds =25v; t ch =25c i d [a] 1 r ds(on) [ w ] 2 i d [a] 3 v ds [v] ? t ch [c] ? v gs [v] ? typical drain-source-on-state-resistance vs. i d typical forward transconductance vs. i d gate threshold voltage vs. t ch - r ds(on) =f(i d ); 80s pulse test;t c =25c - g fs =f(i d ); 80s pulse test; v ds =25v; t ch =25c - v gs(th) =f(t ch ); i d =1ma; v ds =v gs r ds(on) [ w ] 4 g fs [s] 5 v gs(th) [v] 6 i d [a] ? i d [a] ? t ch [c] ? typical capacitances vs. v ds typical gate charge characteristic forward characteristics of reverse diode - c=f(v ds ); v gs =0v; f=1mhz - vgs=f(qg): id=8a; tc=25c - - i f =f(v sd ); 80s pulse test; v gs =0v c [f] 7 v ds [v] 8 v gs [v] i f [a] 9 v ds [v] ? qg [nc] ? v sd [v] ? avalanche energy derating safe operation area eas=f(starting tch): vcc=45v; i av =8a i d =f(v ds ): d=0,01, tc=25c - z th(ch-c) [k/w] transient thermal impedance - 10 - 12 z thch =f(t) parameter:d=t/t eas [mj] i d [a] starting tch [c] ? v ds [v] ? t [s] ? this specification is subject to change without notice!
n-channel mos-fet 2sK2872-01MR 450v 1,2w 8a 30w fap-iis series > characteristics ? this specification is subject to change without notice! power dissipation p d =f(t c ) 0 25 50 75 100 125 0 0 0 0 0 0 0 t c [c] p d / p dmax [%]
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